PART |
Description |
Maker |
GS816272CC-333 GS816272CGC-30I GS816272CC-300 GS81 |
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 4.5 ns, PBGA209 256K x 72 18Mb S/DCD Sync Burst SRAMs 256 × 72 35.7的S /双氰胺同步突发静态存储器 256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 5 ns, PBGA209 256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 7.5 ns, PBGA209
|
GSI Technology, Inc.
|
GS816273CGC-333 GS816273CGC-300 GS816273CC-333I |
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 2.3 ns, PBGA209
|
GSI Technology, Inc.
|
GS816273CC-250IV GS816273CGC-250V GS816273CC-250V |
256K x 72 18Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100 CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的(256 × 36/512K × 18)流水线双氰胺同步静态存储器
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
CY7C1368C-166AJXC CY7C1368C-166AJXI CY7C1368C-166A |
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
|
CY7C1328G-133AXI |
4-Mbit (256K x 18) Pipelined DCD Sync SRAM 256K X 18 CACHE SRAM, 4 ns, PQFP100
|
Cypress Semiconductor, Corp.
|
GS88218BB-V GS88236BGB-250V GS88218BB-150IV GS8821 |
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS882V18BB-3005I GS882V18BD-200I GS882V18BD-250 GS |
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36,为512k × 72分配36MBS /双氰胺同步突发静态存储器 DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35 (GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers List of Unclassifed Man...
|
GS88218BB-333 GS88218BB-3005I GS88218BB-200 GS8823 |
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 5 ns, PBGA119
|
http:// GSI Technology, Inc. Electronic Theatre Controls, Inc.
|
GS88019AT-133 GS88019AT-133I GS88019AT-150I GS8801 |
512K X 18 CACHE SRAM, 3.5 ns, PQFP100 250MHz 512K x 18 9Mb sync burst SRAM 225MHz 512K x 18 9Mb sync burst SRAM 200MHz 512K x 18 9Mb sync burst SRAM 166MHz 512K x 18 9Mb sync burst SRAM 150MHz 512K x 18 9Mb sync burst SRAM 133MHz 512K x 18 9Mb sync burst SRAM 150MHz 256K x 32 9Mb sync burst SRAM 166MHz 256K x 32 9Mb sync burst SRAM 225MHz 256K x 32 9Mb sync burst SRAM 250MHz 256K x 32 9Mb sync burst SRAM 133MHz 256K x 36 9Mb sync burst SRAM 150MHz 256K x 36 9Mb sync burst SRAM 166MHz 256K x 36 9Mb sync burst SRAM 200MHz 256K x 36 9Mb sync burst SRAM 225MHz 256K x 36 9Mb sync burst SRAM 133MHz 256K x 32 9Mb sync burst SRAM 200MHz 256K x 32 9Mb sync burst SRAM 250MHz 256K x 36 9Mb sync burst SRAM
|
GSI Technology
|